SI2301BDS-T1-GE3

Vishay Precision Group

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Part No. SI2301BDS-T1-GE3
Manufacturer Vishay
Description Trans Mosfet P-ch Si 20V 2.2A 3-PIN SOT-23 T/r / Mosfet P-ch 20V 2.2A SOT23-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 58057 pcs
Reference Price
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$0.233$0.21$0.189$0.185
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Target Price:(USD)
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$0.233

Specifications

Data sheet

Vgs(th) (Max) @ Id:950mV @ 250µA
Vgs (Max):±8V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SOT-23-3 (TO-236)
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:100 mOhm @ 2.8A, 4.5V
Power Dissipation (Max):700mW (Ta)
Packaging:Cut Tape (CT)
Package / Case:TO-236-3, SC-59, SOT-23-3
Other Names:SI2301BDS-T1-GE3CT
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:33 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:375pF @ 6V
Gate Charge (Qg) (Max) @ Vgs:10nC @ 4.5V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Drain to Source Voltage (Vdss):20V
Detailed Description:P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)
Current - Continuous Drain (Id) @ 25°C:2.2A (Ta)
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