SI1317DL-T1-GE3

Vishay Precision Group

SI1317DL-T1-GE3
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Part No. SI1317DL-T1-GE3
Manufacturer Vishay
Description SI1317DL-T1-GE3 P-channel MOSFET Transistor; 1.1 A; 20 V; 3-Pin SOT-323
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 51848 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.203$0.184$0.166$0.162
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Target Price:(USD)
Quantity:
Total:
$0.203

Specifications

Data sheet

Vgs(th) (Max) @ Id:800mV @ 250µA
Vgs (Max):±8V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SOT-323
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:150 mOhm @ 1.4A, 4.5V
Power Dissipation (Max):500mW (Tc)
Packaging:Cut Tape (CT)
Package / Case:SC-70, SOT-323
Other Names:SI1317DL-T1-GE3CT
Operating Temperature:-50°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:272pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:6.5nC @ 4.5V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Drain to Source Voltage (Vdss):20V
Detailed Description:P-Channel 20V 1.4A (Tc) 500mW (Tc) Surface Mount SOT-323
Current - Continuous Drain (Id) @ 25°C:1.4A (Tc)
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