SI1032R-T1-GE3

Vishay Precision Group

SI1032R-T1-GE3
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Part No. SI1032R-T1-GE3
Manufacturer Vishay
Description Mosfet; Power; N-ch; Vdss 20V; Rds(on) 5 Ohms; Id 140MA; SC-75A (SOT-416); Pd 250MW
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 28135 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.201$0.182$0.164$0.16
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Target Price:(USD)
Quantity:
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$0.201

Specifications

Data sheet

Vgs(th) (Max) @ Id:1.2V @ 250µA
Vgs (Max):±6V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SC-75A
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:5 Ohm @ 200mA, 4.5V
Power Dissipation (Max):250mW (Ta)
Packaging:Tape & Reel (TR)
Package / Case:SC-75A
Other Names:SI1032R-T1-GE3TR
SI1032RT1GE3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:33 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs:0.75nC @ 4.5V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Drain to Source Voltage (Vdss):20V
Detailed Description:N-Channel 20V 140mA (Ta) 250mW (Ta) Surface Mount SC-75A
Current - Continuous Drain (Id) @ 25°C:140mA (Ta)
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