RW1A030APT2CR

LAPIS Semiconductor

RW1A030APT2CR
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Part No. RW1A030APT2CR
Manufacturer ROHM
Description Trans MOSFET P-CH Si 12V 3A 6-Pin WEMT T/R
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 38113 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.298$0.269$0.243$0.238
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$0.298

Specifications

Data sheet

Vgs(th) (Max) @ Id:1V @ 1mA
Vgs (Max):-8V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:6-WEMT
Series:-
Rds On (Max) @ Id, Vgs:42 mOhm @ 3A, 4.5V
Power Dissipation (Max):700mW (Ta)
Packaging:Tape & Reel (TR)
Package / Case:SOT-563, SOT-666
Other Names:RW1A030APT2CR-ND
RW1A030APT2CRTR
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:2700pF @ 6V
Gate Charge (Qg) (Max) @ Vgs:22nC @ 4.5V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Drain to Source Voltage (Vdss):12V
Detailed Description:P-Channel 12V 3A (Ta) 700mW (Ta) Surface Mount 6-WEMT
Current - Continuous Drain (Id) @ 25°C:3A (Ta)
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