RS1E300GNTB

LAPIS Semiconductor

RS1E300GNTB
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Part No. RS1E300GNTB
Manufacturer LAPIS Semiconductor
Description MOSFET N-CH 30V 30A 8-HSOP
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Reference Price
(In US Dollars)
2500 pcs
$0.457
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Total:
$0.457

Specifications

Data sheet

Vgs(th) (Max) @ Id:2.5V @ 1mA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-HSOP
Series:-
Rds On (Max) @ Id, Vgs:2.2 mOhm @ 30A, 10V
Power Dissipation (Max):3W (Ta), 33W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:8-PowerTDFN
Other Names:RS1E300GNTBTR
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:2500pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:39.8nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30V
Detailed Description:N-Channel 30V 30A (Ta) 3W (Ta), 33W (Tc) Surface Mount 8-HSOP
Current - Continuous Drain (Id) @ 25°C:30A (Ta)
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