RQ3E080GNTB

LAPIS Semiconductor

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Part No. RQ3E080GNTB
Manufacturer ROHM
Description
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 54688 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.249$0.224$0.202$0.198
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Target Price:(USD)
Quantity:
Total:
$0.249

Specifications

Data sheet

Vgs(th) (Max) @ Id:2.5V @ 1mA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-HSMT (3.2x3)
Series:-
Rds On (Max) @ Id, Vgs:16.7 mOhm @ 8A, 10V
Power Dissipation (Max):2W (Ta), 15W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:8-PowerVDFN
Other Names:RQ3E080GNTBTR
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:40 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:295pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:5.8nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30V
Detailed Description:N-Channel 30V 8A (Ta) 2W (Ta), 15W (Tc) Surface Mount 8-HSMT (3.2x3)
Current - Continuous Drain (Id) @ 25°C:8A (Ta)
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