RN2130MFV,L3F
Toshiba Semiconductor and Storage
Images are for reference only.
See Product Specifications for product details.
Buy RN2130MFV,L3F with confidence from CJJhk.com, 1 Year Warranty
See Product Specifications for product details.
Buy RN2130MFV,L3F with confidence from CJJhk.com, 1 Year Warranty
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| Part No. | RN2130MFV,L3F |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | X34 PB-F VESM TRANSISTOR PD 150M |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Reference Price (In US Dollars) | 8000 pcs | ||||
|---|---|---|---|---|---|
| $0.032 | |||||
Specifications
Data sheet
| Voltage - Collector Emitter Breakdown (Max): | 50V |
|---|---|
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 5mA |
| Transistor Type: | PNP - Pre-Biased |
| Supplier Device Package: | VESM |
| Series: | - |
| Resistor - Emitter Base (R2): | 100 kOhms |
| Resistor - Base (R1): | 100 kOhms |
| Power - Max: | 150mW |
| Package / Case: | SOT-723 |
| Other Names: | RN2130MFVL3F |
| Mounting Type: | Surface Mount |
| Manufacturer Standard Lead Time: | 16 Weeks |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detailed Description: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 150mW Surface Mount VESM |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 10mA, 5V |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| Current - Collector (Ic) (Max): | 100mA |
| Email: | info@cjjhk.com |
Introduce
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