RN1444ATE85LF

Toshiba Semiconductor and Storage

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Part No. RN1444ATE85LF
Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 0.2W S-MINI
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):20V
Vce Saturation (Max) @ Ib, Ic:100mV @ 3mA, 30mA
Transistor Type:NPN - Pre-Biased
Supplier Device Package:S-Mini
Series:-
Resistor - Base (R1):2.2 kOhms
Power - Max:200mW
Packaging:Tape & Reel (TR)
Package / Case:TO-236-3, SC-59, SOT-23-3
Other Names:RN1444-A(TE85L,F)
RN1444ATE85LFTR
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:30MHz
Detailed Description:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 20V 300mA 30MHz 200mW Surface Mount S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 4mA, 2V
Current - Collector Cutoff (Max):100nA (ICBO)
Current - Collector (Ic) (Max):300mA
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