RN1412TE85LF

Toshiba Semiconductor and Storage

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Part No. RN1412TE85LF
Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 0.2W S-MINI
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Reference Price
(In US Dollars)
1 pcs10 pcs25 pcs100 pcs
$0.33$0.297$0.214$0.167
250 pcs500 pcs1000 pcs 
$0.105$0.089$0.061 
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$0.33

Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Transistor Type:NPN - Pre-Biased
Supplier Device Package:S-Mini
Series:-
Resistor - Base (R1):22 kOhms
Power - Max:200mW
Packaging:Cut Tape (CT)
Package / Case:TO-236-3, SC-59, SOT-23-3
Other Names:RN1412TE85LFCT
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:250MHz
Detailed Description:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
Current - Collector Cutoff (Max):100nA (ICBO)
Current - Collector (Ic) (Max):100mA
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