RN1108CT(TPL3)

Toshiba Semiconductor and Storage

RN1108CT(TPL3)
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Part No. RN1108CT(TPL3)
Manufacturer Toshiba Semiconductor and Storage
Description TRANS PREBIAS NPN 0.05W CST3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):20V
Vce Saturation (Max) @ Ib, Ic:150mV @ 250µA, 5mA
Transistor Type:NPN - Pre-Biased
Supplier Device Package:CST3
Series:-
Resistor - Emitter Base (R2):47 kOhms
Resistor - Base (R1):22 kOhms
Power - Max:50mW
Packaging:Tape & Reel (TR)
Package / Case:SC-101, SOT-883
Other Names:RN1108CT(TPL3)TR
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 20V 50mA 50mW Surface Mount CST3
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 10mA, 5V
Current - Collector Cutoff (Max):500nA
Current - Collector (Ic) (Max):50mA
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