NTLJS1102PTBG

AMI Semiconductor / ON Semiconductor

NTLJS1102PTBG
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Part No. NTLJS1102PTBG
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET P-CH 8V 3.7A 6-WDFN
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Vgs(th) (Max) @ Id:720mV @ 250µA
Vgs (Max):±6V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:6-WDFN (2x2)
Series:-
Rds On (Max) @ Id, Vgs:36 mOhm @ 6.2A, 4.5V
Power Dissipation (Max):700mW (Ta)
Packaging:Tape & Reel (TR)
Package / Case:6-WDFN Exposed Pad
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1585pF @ 4V
Gate Charge (Qg) (Max) @ Vgs:25nC @ 4.5V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
Drain to Source Voltage (Vdss):8V
Detailed Description:P-Channel 8V 3.7A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)
Current - Continuous Drain (Id) @ 25°C:3.7A (Ta)
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