NTD4856N-1G

AMI Semiconductor / ON Semiconductor

NTD4856N-1G
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Part No. NTD4856N-1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 25V 13.3A IPAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:I-PAK
Series:-
Rds On (Max) @ Id, Vgs:4.7 mOhm @ 30A, 10V
Power Dissipation (Max):1.33W (Ta), 60W (Tc)
Packaging:Tube
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:2241pF @ 12V
Gate Charge (Qg) (Max) @ Vgs:27nC @ 4.5V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):25V
Detailed Description:N-Channel 25V 13.3A (Ta), 89A (Tc) 1.33W (Ta), 60W (Tc) Through Hole I-PAK
Current - Continuous Drain (Id) @ 25°C:13.3A (Ta), 89A (Tc)
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