NSTB60BDW1T1G

AMI Semiconductor / ON Semiconductor

NSTB60BDW1T1G
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Part No. NSTB60BDW1T1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN PREBIAS/PNP 0.25W SC88
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Reference Price
(In US Dollars)
3000 pcs6000 pcs15000 pcs
$0.05$0.043$0.037
30000 pcs75000 pcs150000 pcs
$0.035$0.032$0.029
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$0.05

Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA
Transistor Type:1 NPN Pre-Biased, 1 PNP
Supplier Device Package:SC-88/SC70-6/SOT-363
Series:-
Resistor - Emitter Base (R2):47 kOhms
Resistor - Base (R1):22 kOhms
Power - Max:250mW
Packaging:Tape & Reel (TR)
Package / Case:6-TSSOP, SC-88, SOT-363
Other Names:NSTB60BDW1T1GOS
NSTB60BDW1T1GOS-ND
NSTB60BDW1T1GOSTR
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:40 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:140MHz
Detailed Description:Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V 150mA 140MHz 250mW Surface Mount SC-88/SC70-6/SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V / 120 @ 5mA, 10V
Current - Collector Cutoff (Max):500nA
Current - Collector (Ic) (Max):150mA
Base Part Number:NSTB60B
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