NSS40302PDR2G

onsemi

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Part No. NSS40302PDR2G
Manufacturer onsemi
Description Bipolar (BJT) Transistor Array NPN, PNP 4V 3A 1MHz 653mW Surface Mount 8-SOIC
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 43333 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.657$0.593$0.535$0.523
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$0.657

Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):40V
Vce Saturation (Max) @ Ib, Ic:115mV @ 200mA, 2A
Transistor Type:NPN, PNP
Supplier Device Package:8-SOIC
Series:-
Power - Max:653mW
Packaging:Tape & Reel (TR)
Package / Case:8-SOIC (0.154", 3.90mm Width)
Other Names:NSS40302PDR2G-ND
NSS40302PDR2GOSTR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:2 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:100MHz
Detailed Description:Bipolar (BJT) Transistor Array NPN, PNP 40V 3A 100MHz 653mW Surface Mount 8-SOIC
DC Current Gain (hFE) (Min) @ Ic, Vce:180 @ 1A, 2V
Current - Collector Cutoff (Max):100nA (ICBO)
Current - Collector (Ic) (Max):3A
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