NSBC123TPDP6T5G

AMI Semiconductor / ON Semiconductor

NSBC123TPDP6T5G
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Part No. NSBC123TPDP6T5G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS NPN 254MW SOT963
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Reference Price
(In US Dollars)
8000 pcs
$0.06
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
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Total:
$0.06

Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package:SOT-963
Series:-
Resistor - Emitter Base (R2):-
Resistor - Base (R1):2.2 kOhms
Power - Max:339mW
Packaging:Tape & Reel (TR)
Package / Case:SOT-963
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:14 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:-
Detailed Description:Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 339mW Surface Mount SOT-963
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 5mA, 10V
Current - Collector Cutoff (Max):500nA
Current - Collector (Ic) (Max):100mA
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