NSBC115EPDXV6T1G

AMI Semiconductor / ON Semiconductor

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Part No. NSBC115EPDXV6T1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description SS SOT563 RSTR XSTR TR
Lead Free Status / RoHS Status
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Reference Price
(In US Dollars)
8000 pcs
$0.073
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Target Price:(USD)
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Total:
$0.073

Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package:SOT-563
Series:Automotive, AEC-Q101
Resistor - Emitter Base (R2):100 kOhms
Resistor - Base (R1):100 kOhms
Power - Max:357mW
Package / Case:SOT-563, SOT-666
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:52 Weeks
Frequency - Transition:-
Detailed Description:Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 357mW Surface Mount SOT-563
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Current - Collector Cutoff (Max):500nA
Current - Collector (Ic) (Max):100mA
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