NP23N06YDG-E1-AY

Renesas Electronics America

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Part No. NP23N06YDG-E1-AY
Manufacturer Renesas
Description Trans Mosfet N-ch 60V 23A 8-PIN Hson T/r
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 781 pcs
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Specifications

Data sheet

Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-HSON
Series:-
Rds On (Max) @ Id, Vgs:27 mOhm @ 11.5A, 10V
Power Dissipation (Max):1W (Ta), 60W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:8-SMD, Flat Lead Exposed Pad
Other Names:NP23N06YDG-E1-AY-ND
NP23N06YDG-E1-AYTR
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1800pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:41nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Drain to Source Voltage (Vdss):60V
Detailed Description:N-Channel 60V 23A (Tc) 1W (Ta), 60W (Tc) Surface Mount 8-HSON
Current - Continuous Drain (Id) @ 25°C:23A (Tc)
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