NJVBDX53C

AMI Semiconductor / ON Semiconductor

NJVBDX53C
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Part No. NJVBDX53C
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN DARL 100V 8A TO-220AB
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
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Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):100V
Vce Saturation (Max) @ Ib, Ic:2V @ 12mA, 3A
Transistor Type:NPN - Darlington
Supplier Device Package:TO-220AB
Series:-
Power - Max:65W
Packaging:Tube
Package / Case:TO-220-3
Operating Temperature:-
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):3 (168 Hours)
Lead Free Status / RoHS Status:Contains lead / RoHS non-compliant
Frequency - Transition:-
Detailed Description:Bipolar (BJT) Transistor NPN - Darlington 100V 8A 65W Through Hole TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 3A, 3V
Current - Collector Cutoff (Max):500µA
Current - Collector (Ic) (Max):8A
Base Part Number:BDX53
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