NJL4281DG

AMI Semiconductor / ON Semiconductor

NJL4281DG
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Part No. NJL4281DG
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN 350V 15A TO264
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):350V
Vce Saturation (Max) @ Ib, Ic:1V @ 800mA, 8A
Transistor Type:NPN + Diode (Isolated)
Supplier Device Package:TO-264
Series:-
Power - Max:230W
Packaging:Tube
Package / Case:TO-264-5
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:35MHz
Detailed Description:Bipolar (BJT) Transistor NPN + Diode (Isolated) 350V 15A 35MHz 230W Through Hole TO-264
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5A, 5V
Current - Collector Cutoff (Max):100µA
Current - Collector (Ic) (Max):15A
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