NGTB50N65S1WG

onsemi

NGTB50N65S1WG
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See Product Specifications for product details.
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Part No. NGTB50N65S1WG
Manufacturer onsemi
Description Trans IGBT Chip N-CH 650V 140A 300000mW 3-Pin(3+Tab) TO-247 Tube
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 319 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs1000 pcs10000 pcs
$2.59$2.16$2.09$1.97$1.78
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$2.59

Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):650V
Vce(on) (Max) @ Vge, Ic:2.45V @ 15V, 50A
Test Condition:400V, 50A, 10 Ohm, 15V
Td (on/off) @ 25°C:75ns/128ns
Switching Energy:1.25mJ (on), 530µJ (off)
Supplier Device Package:TO-247
Series:-
Reverse Recovery Time (trr):70ns
Power - Max:300W
Packaging:Tube
Package / Case:TO-247-3
Other Names:NGTB50N65S1WG-ND
NGTB50N65S1WGOS
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Type:Standard
IGBT Type:Trench
Gate Charge:128nC
Detailed Description:IGBT Trench 650V 140A 300W Through Hole TO-247
Current - Collector Pulsed (Icm):140A
Current - Collector (Ic) (Max):140A
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