NDD60N550U1-1G

AMI Semiconductor / ON Semiconductor

NDD60N550U1-1G
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Part No. NDD60N550U1-1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 600V 8.2A IPAK-4
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±25V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:IPAK (TO-251)
Series:-
Rds On (Max) @ Id, Vgs:550 mOhm @ 4A, 10V
Power Dissipation (Max):94W (Tc)
Packaging:Tube
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):3 (168 Hours)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:540pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:18nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):600V
Detailed Description:N-Channel 600V 8.2A (Tc) 94W (Tc) Through Hole IPAK (TO-251)
Current - Continuous Drain (Id) @ 25°C:8.2A (Tc)
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