NAND512R3A2SZA6F

Micron Technology

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Part No. NAND512R3A2SZA6F
Manufacturer Micron Technology
Description IC FLASH 512M PARALLEL 63VFBGA
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Write Cycle Time - Word, Page:50ns
Voltage - Supply:1.7 V ~ 1.95 V
Technology:FLASH - NAND
Supplier Device Package:63-VFBGA (9x11)
Series:-
Packaging:Bulk
Package / Case:63-TFBGA
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):3 (168 Hours)
Memory Type:Non-Volatile
Memory Size:512Mb (64M x 8)
Memory Interface:Parallel
Memory Format:FLASH
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:FLASH - NAND Memory IC 512Mb (64M x 8) Parallel 50ns 63-VFBGA (9x11)
Access Time:50ns
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