MTW32N20EG

AMI Semiconductor / ON Semiconductor

MTW32N20EG
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Part No. MTW32N20EG
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 200V 32A TO247
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-247
Series:-
Rds On (Max) @ Id, Vgs:75 mOhm @ 16A, 10V
Power Dissipation (Max):180W (Tc)
Packaging:Tube
Package / Case:TO-247-3
Other Names:MTW32N20EGOS
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:5000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:120nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):200V
Detailed Description:N-Channel 200V 32A (Tc) 180W (Tc) Through Hole TO-247
Current - Continuous Drain (Id) @ 25°C:32A (Tc)
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