MT3S113P(TE12L,F)

Toshiba Semiconductor and Storage

MT3S113P(TE12L,F)
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Part No. MT3S113P(TE12L,F)
Manufacturer Toshiba Semiconductor and Storage
Description RF SIGE HETEROJUNCTION BIPOLAR N
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Reference Price
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1000 pcs2000 pcs5000 pcs10000 pcs25000 pcs
$0.423$0.395$0.375$0.36$0.35
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$0.423

Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):5.3V
Transistor Type:NPN
Supplier Device Package:PW-MINI
Series:-
Power - Max:1.6W
Packaging:Tape & Reel (TR)
Package / Case:TO-243AA
Other Names:MT3S113P(TE12LF)
MT3S113P(TE12LF)TR
Operating Temperature:150°C (TJ)
Noise Figure (dB Typ @ f):1.45dB @ 1GHz
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:12 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Gain:10.5dB
Frequency - Transition:7.7GHz
Detailed Description:RF Transistor NPN 5.3V 100mA 7.7GHz 1.6W Surface Mount PW-MINI
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 30mA, 5V
Current - Collector (Ic) (Max):100mA
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