MJE271G

AMI Semiconductor / ON Semiconductor

MJE271G
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Part No. MJE271G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PNP DARL 100V 2A TO-225
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):100V
Vce Saturation (Max) @ Ib, Ic:3V @ 1.2mA, 120mA
Transistor Type:PNP - Darlington
Supplier Device Package:TO-225AA
Series:-
Power - Max:1.5W
Packaging:Bulk
Package / Case:TO-225AA, TO-126-3
Other Names:MJE271G-ND
MJE271GOS
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:6MHz
Detailed Description:Bipolar (BJT) Transistor PNP - Darlington 100V 2A 6MHz 1.5W Through Hole TO-225AA
DC Current Gain (hFE) (Min) @ Ic, Vce:1500 @ 120mA, 10V
Current - Collector Cutoff (Max):1mA
Current - Collector (Ic) (Max):2A
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