MJD5731T4G

onsemi

MJD5731T4G
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Part No. MJD5731T4G
Manufacturer onsemi
Description 1.0 A, 350 V High Voltage PNP Bipolar Power Transistor
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 42957 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.367$0.332$0.299$0.293
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$0.367

Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):1A
Voltage - Breakdown:DPAK-3
Vce Saturation (Max) @ Ib, Ic:350V
Series:-
RoHS Status:Tape & Reel (TR)
Resistor - Base (R1) (Ohms):10MHz
Power - Max:1.56W
Polarization:TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names:MJD5731T4G-ND
MJD5731T4GOSTR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:6 Weeks
Manufacturer Part Number:MJD5731T4G
Frequency - Transition:30 @ 300mA, 10V
Expanded Description:Bipolar (BJT) Transistor PNP 350V 1A 10MHz 1.56W Surface Mount DPAK-3
Description:TRANS PNP 350V 1A DPAK
DC Current Gain (hFE) (Min) @ Ic, Vce:100µA
Current - Collector Cutoff (Max):1V @ 200mA, 1A
Current - Collector (Ic) (Max):PNP
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