MJD253T4G

onsemi

MJD253T4G
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Part No. MJD253T4G
Manufacturer onsemi
Description Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 51493 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.286$0.258$0.233$0.228
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$0.286

Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):100V
Vce Saturation (Max) @ Ib, Ic:600mV @ 100mA, 1A
Transistor Type:PNP
Supplier Device Package:DPAK
Series:-
Power - Max:1.4W
Packaging:Tape & Reel (TR)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names:MJD253T4GOS
MJD253T4GOS-ND
MJD253T4GOSTR
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:6 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:40MHz
Detailed Description:Bipolar (BJT) Transistor PNP 100V 4A 40MHz 1.4W Surface Mount DPAK
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 200mA, 1V
Current - Collector Cutoff (Max):100nA (ICBO)
Current - Collector (Ic) (Max):4A
Base Part Number:MJD253
Email:info@cjjhk.com

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