MJD112-1G

onsemi

MJD112-1G
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Part No. MJD112-1G
Manufacturer onsemi
Description 2.0 A, 100 V NPN Darlington Bipolar Power Transistor
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 44693 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.53$0.478$0.431$0.422
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Target Price:(USD)
Quantity:
Total:
$0.53

Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):100V
Vce Saturation (Max) @ Ib, Ic:3V @ 40mA, 4A
Transistor Type:NPN - Darlington
Supplier Device Package:I-PAK
Series:-
Power - Max:1.75W
Packaging:Tube
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
Other Names:MJD112-1GOS
MJD1121G
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:9 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:25MHz
Detailed Description:Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Through Hole I-PAK
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 2A, 3V
Current - Collector Cutoff (Max):20µA
Current - Collector (Ic) (Max):2A
Base Part Number:MJD112
Email:info@cjjhk.com

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