MJ14002G

onsemi

MJ14002G
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Part No. MJ14002G
Manufacturer onsemi
Description Transistor, Bipolar, Si, NPN, High Current, Power, VCEO 80VDC, IC 60A, PD 300W, hFE 5
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 1472 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$16.238$14.657$13.22$12.933
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$16.238

Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):80V
Vce Saturation (Max) @ Ib, Ic:3V @ 12A, 60A
Transistor Type:NPN
Supplier Device Package:TO-3
Series:-
Power - Max:300W
Packaging:Tray
Package / Case:TO-204AE
Other Names:MJ14002GOS
Operating Temperature:-65°C ~ 200°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:5 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:-
Detailed Description:Bipolar (BJT) Transistor NPN 80V 60A 300W Through Hole TO-3
DC Current Gain (hFE) (Min) @ Ic, Vce:15 @ 50A, 3V
Current - Collector Cutoff (Max):1mA
Current - Collector (Ic) (Max):60A
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