MBRA2H100T3G

onsemi

MBRA2H100T3G
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Part No. MBRA2H100T3G
Manufacturer onsemi
Description This device employs the Schottky Barrier principle in a metal-to-silicon power rectifier.
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 41248 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.541$0.489$0.441$0.431
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$0.541

Specifications

Data sheet

Voltage - Forward (Vf) (Max) @ If:790mV @ 2A
Voltage - DC Reverse (Vr) (Max):100V
Supplier Device Package:SMA
Speed:Fast Recovery = 200mA (Io)
Series:-
Packaging:Tape & Reel (TR)
Package / Case:DO-214AC, SMA
Other Names:MBRA2H100T3G-ND
MBRA2H100T3GOSTR
Operating Temperature - Junction:-65°C ~ 175°C
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:11 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Diode Type:Schottky
Detailed Description:Diode Schottky 100V 2A Surface Mount SMA
Current - Reverse Leakage @ Vr:8µA @ 100V
Current - Average Rectified (Io):2A
Capacitance @ Vr, F:-
Base Part Number:MBRA2H100
Email:info@cjjhk.com

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