MB85R256FPF-G-BNDE1

Fujitsu Electronics America, Inc.

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Part No. MB85R256FPF-G-BNDE1
Manufacturer Fujitsu Electronics America, Inc.
Description IC FRAM 256K PARALLEL 28SOP
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Write Cycle Time - Word, Page:150ns
Voltage - Supply:2.7 V ~ 3.6 V
Technology:FRAM (Ferroelectric RAM)
Supplier Device Package:28-SOP
Series:-
Packaging:Tray
Package / Case:28-SOIC (0.342", 8.69mm Width)
Other Names:865-1171
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Memory Type:Non-Volatile
Memory Size:256Kb (32K x 8)
Memory Interface:Parallel
Memory Format:FRAM
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:FRAM (Ferroelectric RAM) Memory IC 256Kb (32K x 8) Parallel 150ns 28-SOP
Access Time:150ns
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