JAN1N649-1

Microsemi

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Part No. JAN1N649-1
Manufacturer Microsemi Corporation
Description DIODE GEN PURP 600V 400MA DO35
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
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Specifications

Data sheet

Voltage - Peak Reverse (Max):Standard
Voltage - Forward (Vf) (Max) @ If:400mA
Voltage - Breakdown:DO-35
Series:Military, MIL-PRF-19500/240
RoHS Status:Bulk
Reverse Recovery Time (trr):Standard Recovery >500ns, > 200mA (Io)
Resistance @ If, F:-
Polarization:DO-204AH, DO-35, Axial
Other Names:1086-15995
1086-15995-MIL
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Part Number:JAN1N649-1
Expanded Description:Diode Standard 600V 400mA Through Hole DO-35
Diode Configuration:50nA @ 600V
Description:DIODE GEN PURP 600V 400MA DO35
Current - Reverse Leakage @ Vr:1V @ 400mA
Current - Average Rectified (Io) (per Diode):600V
Capacitance @ Vr, F:-65°C ~ 175°C
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