IXFT6N100F

IXYS RF

IXFT6N100F
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Part No. IXFT6N100F
Manufacturer IXYS RF
Description MOSFET N-CH 1000V 6A TO268
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 192 pcs
Reference Price
(In US Dollars)
1 pcs30 pcs120 pcs510 pcs
$11.53$9.454$8.531$7.148
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$11.53

Specifications

Data sheet

Vgs(th) (Max) @ Id:5.5V @ 2.5mA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-268 (IXFT)
Series:HiPerRF™
Rds On (Max) @ Id, Vgs:1.9 Ohm @ 3A, 10V
Power Dissipation (Max):180W (Tc)
Packaging:Tube
Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:14 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1770pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:54nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):1000V
Detailed Description:N-Channel 1000V 6A (Tc) 180W (Tc) Surface Mount TO-268 (IXFT)
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
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