IXFM67N10

IXYS Corporation

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Part No. IXFM67N10
Manufacturer IXYS Corporation
Description POWER MOSFET TO-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Vgs(th) (Max) @ Id:4V @ 4mA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-204AE
Series:HiPerFET™
Rds On (Max) @ Id, Vgs:25 mOhm @ 33.5A, 10V
Power Dissipation (Max):300W (Tc)
Package / Case:TO-204AE
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:4500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:260nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):100V
Detailed Description:N-Channel 100V 67A (Tc) 300W (Tc) Through Hole TO-204AE
Current - Continuous Drain (Id) @ 25°C:67A (Tc)
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