IXFH6N100F

IXYS Corporation

IXFH6N100F
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Part No. IXFH6N100F
Manufacturer IXYS
Description IXYS RF IXFH6N100F RF FET Transistor, 1 kV, 6 A, 180 W, 500 kHz, TO-247AD
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 9504 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$7.409$6.688$6.032$5.901
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$7.409

Specifications

Data sheet

Vgs(th) (Max) @ Id:5.5V @ 2.5mA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-247 (IXFH)
Series:HiPerRF™
Rds On (Max) @ Id, Vgs:1.9 Ohm @ 3A, 10V
Power Dissipation (Max):180W (Tc)
Packaging:Tube
Package / Case:TO-247-3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:14 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1770pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:54nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):1000V
Detailed Description:N-Channel 1000V 6A (Tc) 180W (Tc) Through Hole TO-247 (IXFH)
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
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