IRL6372PBF

International Rectifier (Infineon Technologies)

IRL6372PBF
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Part No. IRL6372PBF
Manufacturer Infineon
Description Dual N-Channel 30 V 2.0 W 11 nC Hexfet Power Mosfet Surface Mount SOIC-8
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 48180 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.395$0.357$0.322$0.315
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$0.395

Specifications

Data sheet

Vgs(th) (Max) @ Id:1.1V @ 10µA
Supplier Device Package:8-SO
Series:HEXFET®
Rds On (Max) @ Id, Vgs:17.9 mOhm @ 8.1A, 4.5V
Power - Max:2W
Packaging:Tube
Package / Case:8-SOIC (0.154", 3.90mm Width)
Other Names:SP001568406
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1020pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:11nC @ 4.5V
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Detailed Description:Mosfet Array 2 N-Channel (Dual) 30V 8.1A 2W Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C:8.1A
Base Part Number:IRL6372PBF
Email:info@cjjhk.com

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