IRFD110

Vishay Precision Group

IRFD110
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Part No. IRFD110
Manufacturer Vishay
Description Single N-Channel 60 V 0.54 Ohms Through Hole Power Mosfet HVMDIP-4
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
In stock 39043 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.907$0.819$0.738$0.722
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$0.907

Specifications

Data sheet

Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:4-DIP, Hexdip, HVMDIP
Series:-
Rds On (Max) @ Id, Vgs:540 mOhm @ 600mA, 10V
Power Dissipation (Max):1.3W (Ta)
Packaging:Tube
Package / Case:4-DIP (0.300", 7.62mm)
Other Names:*IRFD110
IRFD111
IRFD112
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Contains lead / RoHS non-compliant
Input Capacitance (Ciss) (Max) @ Vds:180pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:8.3nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):100V
Detailed Description:N-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP
Current - Continuous Drain (Id) @ 25°C:1A (Ta)
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