IRFB4215

International Rectifier (Infineon Technologies)

IRFB4215
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Part No. IRFB4215
Manufacturer Infineon
Description Single N-Channel 60 V 9 mOhm 170 nC HEXFET? Power Mosfet TO-220-3AB
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
In stock 23770 pcs
Reference Price
(In US Dollars)
50 pcs
$3.234
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Target Price:(USD)
Quantity:
Total:
$3.234

Specifications

Data sheet

Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220AB
Series:HEXFET®
Rds On (Max) @ Id, Vgs:9 mOhm @ 54A, 10V
Power Dissipation (Max):270W (Tc)
Packaging:Tube
Package / Case:TO-220-3
Other Names:*IRFB4215
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Contains lead / RoHS non-compliant
Input Capacitance (Ciss) (Max) @ Vds:4080pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:170nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):60V
Detailed Description:N-Channel 60V 115A (Tc) 270W (Tc) Through Hole TO-220AB
Current - Continuous Drain (Id) @ 25°C:115A (Tc)
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