IRFB3307

International Rectifier (Infineon Technologies)

IRFB3307
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Part No. IRFB3307
Manufacturer Infineon
Description MOSFET, N Ch., 75V, 120A, 5.8 MOHM, 79 NC QG, TO-220AB, Pb-Free
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
In stock 16979 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$1.605$1.449$1.307$1.278
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$1.605

Specifications

Data sheet

Vgs(th) (Max) @ Id:4V @ 150µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220AB
Series:HEXFET®
Rds On (Max) @ Id, Vgs:6.3 mOhm @ 75A, 10V
Power Dissipation (Max):250W (Tc)
Packaging:Tube
Package / Case:TO-220-3
Other Names:*IRFB3307
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Contains lead / RoHS non-compliant
Input Capacitance (Ciss) (Max) @ Vds:5150pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:180nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):75V
Detailed Description:N-Channel 75V 130A (Tc) 250W (Tc) Through Hole TO-220AB
Current - Continuous Drain (Id) @ 25°C:130A (Tc)
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