IRF5810TR

International Rectifier (Infineon Technologies)

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Part No. IRF5810TR
Manufacturer Infineon
Description MOSFET, Power; Dual P-Ch; VDSS -20V; RDS(ON) 90 Milliohms; ID -2.9A; TSOP-6; PD 0.96W
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
In stock 40085 pcs
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$0.25$0.225$0.203$0.199
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Specifications

Data sheet

Vgs(th) (Max) @ Id:1.2V @ 250µA
Supplier Device Package:6-TSOP
Series:HEXFET®
Rds On (Max) @ Id, Vgs:90 mOhm @ 2.9A, 4.5V
Power - Max:960mW
Packaging:Tape & Reel (TR)
Package / Case:SOT-23-6 Thin, TSOT-23-6
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Contains lead / RoHS non-compliant
Input Capacitance (Ciss) (Max) @ Vds:650pF @ 16V
Gate Charge (Qg) (Max) @ Vgs:9.6nC @ 4.5V
FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Detailed Description:Mosfet Array 2 P-Channel (Dual) 20V 2.9A 960mW Surface Mount 6-TSOP
Current - Continuous Drain (Id) @ 25°C:2.9A
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