HUFA76609D3ST_F085

AMI Semiconductor / ON Semiconductor

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Part No. HUFA76609D3ST_F085
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 100V 10A DPAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Vgs(th) (Max) @ Id:3V @ 250µA
Vgs (Max):±16V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-252AA
Series:Automotive, AEC-Q101, UltraFET™
Rds On (Max) @ Id, Vgs:160 mOhm @ 10A, 10V
Power Dissipation (Max):49W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:425pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:16nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):100V
Detailed Description:N-Channel 100V 10A (Tc) 49W (Tc) Surface Mount TO-252AA
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
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