HTNFET-D

Honeywell Microelectronics & Precision Sensors

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Part No. HTNFET-D
Manufacturer Honeywell Microelectronics & Precision Sensors
Description MOSFET N-CH 55V 8-DIP
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
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Reference Price
(In US Dollars)
1 pcs
$450.23
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Total:
$450.23

Specifications

Data sheet

Vgs(th) (Max) @ Id:2.4V @ 100µA
Vgs (Max):10V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-CDIP-EP
Series:HTMOS™
Rds On (Max) @ Id, Vgs:400 mOhm @ 100mA, 5V
Power Dissipation (Max):50W (Tj)
Packaging:Tube
Package / Case:8-CDIP Exposed Pad
Other Names:342-1078
Operating Temperature:-55°C ~ 225°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:8 Weeks
Lead Free Status / RoHS Status:Contains lead / RoHS non-compliant
Input Capacitance (Ciss) (Max) @ Vds:290pF @ 28V
Gate Charge (Qg) (Max) @ Vgs:4.3nC @ 5V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):5V
Drain to Source Voltage (Vdss):55V
Detailed Description:N-Channel 55V 50W (Tj) Through Hole 8-CDIP-EP
Current - Continuous Drain (Id) @ 25°C:-
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