HP8S36TB

LAPIS Semiconductor

HP8S36TB
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Part No. HP8S36TB
Manufacturer ROHM
Description 30V Nch+Nch Middle Power MOSFET, HSOP8(Dual), Nch+Nch
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 30279 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$0.819$0.739$0.667$0.652
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$0.819

Specifications

Data sheet

Vgs(th) (Max) @ Id:2.5V @ 1mA
Supplier Device Package:8-HSOP
Series:-
Rds On (Max) @ Id, Vgs:2.4 mOhm @ 32A, 10V
Power - Max:29W
Packaging:Original-Reel®
Package / Case:8-PowerTDFN
Other Names:HP8S36TBDKR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:40 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:6100pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:47nC @ 4.5V
FET Type:2 N-Channel (Half Bridge)
FET Feature:-
Drain to Source Voltage (Vdss):30V
Detailed Description:Mosfet Array 2 N-Channel (Half Bridge) 30V 27A, 80A 29W Surface Mount 8-HSOP
Current - Continuous Drain (Id) @ 25°C:27A, 80A
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