HN4B04J(TE85L,F)

Toshiba Semiconductor and Storage

HN4B04J(TE85L,F)
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Part No. HN4B04J(TE85L,F)
Manufacturer Toshiba
Description Bipolar Transistors BJT Trans LFreq -120V PNP PNP -0.1A
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 2422 pcs
Reference Price
(In US Dollars)
3000 pcs
$0.069
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$0.069

Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):30V
Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
Transistor Type:NPN, PNP
Supplier Device Package:SMV
Series:-
Power - Max:300mW
Packaging:Tape & Reel (TR)
Package / Case:SC-74A, SOT-753
Other Names:HN4B04J(TE85LF)TR
HN4B04JTE85LF
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:200MHz
Detailed Description:Bipolar (BJT) Transistor Array NPN, PNP 30V 500mA 200MHz 300mW Surface Mount SMV
DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 100mA, 1V
Current - Collector Cutoff (Max):100µA (ICBO)
Current - Collector (Ic) (Max):500mA
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