HN1A01FU-GR,LF

Toshiba Semiconductor and Storage

HN1A01FU-GR,LF
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Part No. HN1A01FU-GR,LF
Manufacturer Toshiba Semiconductor and Storage
Description TRANS 2PNP 50V 0.15A US6-PLN
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Reference Price
(In US Dollars)
1 pcs10 pcs25 pcs100 pcs
$0.26$0.233$0.168$0.13
250 pcs500 pcs1000 pcs 
$0.082$0.07$0.048 
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Target Price:(USD)
Quantity:
Total:
$0.26

Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:300mV @ 10mA, 100mA
Transistor Type:2 PNP (Dual)
Supplier Device Package:US6
Series:-
Power - Max:200mW
Packaging:Cut Tape (CT)
Package / Case:6-TSSOP, SC-88, SOT-363
Other Names:HN1A01FU-GRLFCT
HN1A01FUGRLFTCT
HN1A01FUGRLFTCT-ND
Operating Temperature:125°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:80MHz
Detailed Description:Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 150mA 80MHz 200mW Surface Mount US6
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 6V
Current - Collector Cutoff (Max):100nA (ICBO)
Current - Collector (Ic) (Max):150mA
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