HGTP10N120BN

onsemi

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Part No. HGTP10N120BN
Manufacturer onsemi
Description Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-220AB Rail
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In stock 11007 pcs
Reference Price
(In US Dollars)
10 pcs100 pcs1000 pcs10000 pcs
$1.799$1.624$1.464$1.433
Submit a Request For Quotation on quantities greater than those displayed.
Target Price:(USD)
Quantity:
Total:
$1.799

Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):1200V
Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 10A
Test Condition:960V, 10A, 10 Ohm, 15V
Td (on/off) @ 25°C:23ns/165ns
Switching Energy:320µJ (on), 800µJ (off)
Supplier Device Package:TO-220AB
Series:-
Power - Max:298W
Packaging:Tube
Package / Case:TO-220-3
Other Names:HGTP10N120BN-ND
HGTP10N120BNFS
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Type:Standard
IGBT Type:NPT
Gate Charge:100nC
Detailed Description:IGBT NPT 1200V 35A 298W Through Hole TO-220AB
Current - Collector Pulsed (Icm):80A
Current - Collector (Ic) (Max):35A
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