GT8G133(TE12L,Q)

Toshiba Semiconductor and Storage

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Part No. GT8G133(TE12L,Q)
Manufacturer Toshiba Semiconductor and Storage
Description IGBT 400V 600MW 8TSSOP
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):400V
Vce(on) (Max) @ Vge, Ic:2.9V @ 4V, 150A
Test Condition:-
Td (on/off) @ 25°C:1.7µs/2µs
Switching Energy:-
Supplier Device Package:8-TSSOP
Series:-
Power - Max:600mW
Packaging:Tape & Reel (TR)
Package / Case:8-TSSOP (0.173", 4.40mm Width)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Type:Standard
IGBT Type:-
Detailed Description:IGBT 400V 600mW Surface Mount 8-TSSOP
Current - Collector Pulsed (Icm):150A
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