GT60N321(Q)

Toshiba Semiconductor and Storage

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Part No. GT60N321(Q)
Manufacturer Toshiba Semiconductor and Storage
Description IGBT 1000V 60A 170W TO3P LH
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):1000V
Vce(on) (Max) @ Vge, Ic:2.8V @ 15V, 60A
Test Condition:-
Td (on/off) @ 25°C:330ns/700ns
Switching Energy:-
Supplier Device Package:TO-3P(LH)
Series:-
Reverse Recovery Time (trr):2.5µs
Power - Max:170W
Packaging:Tube
Package / Case:TO-3PL
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Type:Standard
IGBT Type:-
Detailed Description:IGBT 1000V 60A 170W Through Hole TO-3P(LH)
Current - Collector Pulsed (Icm):120A
Current - Collector (Ic) (Max):60A
Base Part Number:GT60
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