GT50J121(Q)

Toshiba Semiconductor and Storage

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Part No. GT50J121(Q)
Manufacturer Toshiba Semiconductor and Storage
Description IGBT 600V 50A 240W TO3P LH
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Voltage - Collector Emitter Breakdown (Max):600V
Vce(on) (Max) @ Vge, Ic:2.45V @ 15V, 50A
Test Condition:300V, 50A, 13 Ohm, 15V
Td (on/off) @ 25°C:90ns/300ns
Switching Energy:1.3mJ (on), 1.34mJ (off)
Supplier Device Package:TO-3P(LH)
Series:-
Power - Max:240W
Packaging:Tube
Package / Case:TO-3PL
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Type:Standard
IGBT Type:-
Detailed Description:IGBT 600V 50A 240W Through Hole TO-3P(LH)
Current - Collector Pulsed (Icm):100A
Current - Collector (Ic) (Max):50A
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