GP2M004A065PG

Global Power Technologies Group

GP2M004A065PG
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Part No. GP2M004A065PG
Manufacturer Global Power Technologies Group
Description MOSFET N-CH 650V 4A IPAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
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Specifications

Data sheet

Vgs(th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:I-PAK
Series:-
Rds On (Max) @ Id, Vgs:2.4 Ohm @ 2A, 10V
Power Dissipation (Max):98.4W (Tc)
Packaging:Tube
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
Other Names:1560-1196-1
1560-1196-1-ND
1560-1196-5
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:642pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:15nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):650V
Detailed Description:N-Channel 650V 4A (Tc) 98.4W (Tc) Through Hole I-PAK
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
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